Dimension Inches Millimeters
A1.02±0.02 26.0±0.5
B 0.81 Max. 20.5 Max.
C 0.79 Min. 20.0 Min.
D 0.24±0.008 6.0±0.2
E 0.214±0.012 5.45±0.3
F 0.20±0.012 5.0±0.3
G 0.214±0.012 Dia. Dia. 3.2±0.2
H 0.12±0.012 3.0±0.3
J 0.10±0.012 2.5±0.3
K 0.10 2.5
L 0.08±0.012 2.0±0.3
M 0.04±0.008 1.0±0.2
N 0.02±0.008 0.6±0.2
Description:
Powerex Super Fast Recovery
Diodes are designed for use in
applications requiring fast
switching.
Features:
M
Non-Isolated Package
M
Planar Chips
M
trr
= 200 ns Max.
Applications:
M
Snubber Circuits
M
Switching Power Supplies
M
Free Wheeling
Ordering Information:
Select the complete eight digit
part number you desire
from
the table below.
Example: RM50HG-12S is a
600 Volt, 50 Ampere Super Fast
Recovery Single Diode.
Current Rating Voltage
Type Amperes Volts (x50)
RM 50 12
D-3
Powerex,
Inc.,
200 Hillis Street,Youngwood,
Pennsylvania 15697-1800 (724) 925-7272
Super Fast Recovery
Single Diode
50 Amperes/600 Volts
RM50HG-12S
Outline Drawing
RM50HG-12S
Super Fast Recovery
Single Diode
50 Amperes/600 Volts
A
C
D
E
E
F
B
H
N
M
K
J
L
G - DIA.
1
2
3
1
2
3
4
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相关代理商/技术参数
RM50HG-12S_01 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
RM50HG-12S_09 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH SPEED SWITCHING USE NON-INSULATED TYPE
RM50TC-24 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE
RM50TC-2H 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE
RM50TC-H 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE
RM50TC-M 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE
RM5100A 制造商:Black Box Corporation 功能描述:45U ZONE4 SEISMIC CABINETM6, 84"x28"x40"
RM5100A -W1 制造商:Black Box Corporation 功能描述:1 YEAR WARRANTY FOR RM5100A